2 citations · 2 across the 9 of their papers we have counts for
10 papers
Compositional gradient engineering for enhanced ferroelectricity in ultrathin AlScN
Zekun Hu, Haiwen Zhang, Rajeev Kumar Rai +12
Ferroelectric AlScN is promising for CMOS-compatible non-volatile memory, but thickness scaling is limited by leakage, premature breakdown, and defect-mediated failure. Here we sho…
Controlled non-volatile modulation of optical dispersion in monolayer tungsten disulfide via ferroelectric polarization patterning
Yuhong Cao, Zekun Hu, Jason Lynch +7
The manipulation of optical properties, including reflection, refraction, polarization, phase, and frequency, has long been central to advancing photonic and optoelectronic technol…
Tuning Breakdown-to-Coercive Field Ratio in Ultra-Thin Al1-xScxN Films via Reactive Nitrogen Atmosphere
Yinuo Zhang, Walter J. Smith, Giovanni Esteves +3
Al1-xScxN has attracted significant interest due to its large remnant polarization and low processing temperature when compared to other ferroelectric material systems. However, de…
Hydrazine-Free Precursor for Solution-Processed All-Inorganic Se and Se1-xTex Photovoltaics
Adam D. Alfieri, Swarnendu Das, Kim Kisslinger +5
Selenium (Se) has reemerged as a promising absorber material for indoor and tandem photovoltaics (PVs), and its alloys with Te (Se1-xTex) offer a widely tunable bandgap. Solution p…
Write Cycling Endurance Exceeding 1010 in Sub-50 nm Ferroelectric AlScN
Hyunmin Cho, Yubo Wang, Chloe Leblanc +5
Wurtzite ferroelectrics, particularly aluminum scandium nitride (AlScN), have emerged as a promising materials platform for nonvolatile memories, offering high polarization values…
Low-voltage Ferroelectric Field-Effect Transistors with Ultrathin Aluminum Scandium Nitride and 2D channels
Chloe Leblanc, Hyunmin Cho, Yinuo Zhang +7
The continued evolution of CMOS technology demands materials and architectures that emphasize low power consumption, particularly for computations involving large scale data proces…
Demonstration of highly scaled AlScN ferroelectric diode memory with storage density > 100 Mbit/mm
Zekun Hu, Hyunmin Cho, Rajeev Kumar Rai +13
Wurtzite nitride ferroelectric materials have emerged as promising candidates for next-generation memory applications due to their exceptional polarization properties and compatibi…
2D ferroelectrics and ferroelectrics with 2D: materials and device prospects
Chloe Leblanc, Seunguk Song, Deep Jariwala
Ferroelectric and two-dimensional materials are both heavily investigated classes of electronic materials. This is unsurprising since they both have superlative fundamental propert…
Near 6 GHz Sezawa Mode Surface Acoustic Wave Resonators using AlScN on SiC
Xingyu Du, Nishant Sharma, Zichen Tang +3
Surface Acoustic Wave (SAW) devices featuring Aluminum Scandium Nitride (AlScN) on a 4H-Silicon Carbide (SiC) substrate, offer a unique blend of high sound velocity, low thermal re…
DER Information Unaware Coordination via Day-ahead Dynamic Power Bounds
Thomas Navidi, Chloe Leblanc, Abbas El Gamal +1
Reliability and voltage quality in distribution networks have been achieved via a combination of transformer power rating satisfaction and voltage management asset control. To main…