33 citations · 92 across the 10 of their papers we have counts for
11 papers
First-principles dissociation pathways of BCl on the Si(100)-21 surface
Quinn T. Campbell, Shashank Misra, Jeffrey A. Ivie
One of the most promising acceptor precursors for atomic-precision -doping of silicon is BCl. The chemical pathway, and the resulting kinetics, through which BCl adsorbs…
Direct integration of atomic precision advanced manufacturing into middle-of-line silicon fabrication
E. M. Anderson, C. R. Allemang, A. J. Leenheer +13
Atomic precision advanced manufacturing (APAM) dopes silicon with enough carriers to change its electronic structure and can be used to create novel devices by defining metallic re…
Roadmap on Atomic-scale Semiconductor Devices
Steven R. Schofield, Andrew J. Fisher, Eran Ginossar +47
Spin states in semiconductors provide exceptionally stable and noise-resistant environments for qubits, positioning them as optimal candidates for reliable quantum computing techno…
Exploring transport mechanisms in atomic precision advanced manufacturing enabled pn junctions
Juan P. Mendez, Xujiao Gao, Jeffrey Ivie +4
We investigate the different transport mechanisms that can occur in pn junction devices made using atomic precision advanced manufacturing (APAM) at temperatures ranging from cryog…
Suppression of mid-infrared plasma resonance due to quantum confinement in delta-doped silicon
Steve M. Young, Aaron M. Katzenmeyer, Evan M. Anderson +5
The classical Drude model provides an accurate description of the plasma resonance of three-dimensional materials, but only partially explains two-dimensional systems where quantum…
Robust incorporation in multi-donor patches created using atomic-precision advanced manufacturing
Quinn Campbell, Justine C. Koepke, Jeffrey A. Ivie +6
Atomic-precision advanced manufacturing enables the placement of dopant atoms within 1 lattice site in crystalline Si. However, it has recently been shown that reaction kineti…
Accelerated Lifetime Testing and Analysis of Delta-doped Silicon Test Structures
Connor Halsey, Jessica Depoy, DeAnna M. Campbell +7
As transistor features shrink beyond the 2 nm node, studying and designing for atomic scale effects become essential. Being able to combine conventional CMOS with new atomic scale…
The impact of stochastic incorporation on atomic-precision Si:P arrays
Jeffrey A. Ivie, Quinn Campbell, Justin C. Koepke +9
Scanning tunneling microscope lithography can be used to create nanoelectronic devices in which dopant atoms are precisely positioned in a Si lattice within 1 nm of a target…
Correlated Energy-Level Alignment Effects Determine Substituent-Tuned Single-Molecule Conductance
Jeffrey A. Ivie, Nathan D. Bamberger, Keshaba N. Parida +7
The rational design of single molecule electrical components requires a deep and predictive understanding of structure-function relationships. Here we explore the relationship betw…
A model for atomic precision p-type doping with diborane on Si(100)-21
Quinn Campbell, Jeffrey A. Ivie, Ezra Bussmann +3
Diborane (BH) is a promising molecular precursor for atomic precision p-type doping of silicon that has recently been experimentally demonstrated [T. {Š}kere{ň}, \textit{et…
Unsupervised Segmentation-Based Machine Learning as an Advanced Analysis Tool for Single Molecule Break Junction Data
Nathan D. Bamberger, Jeffrey A. Ivie, Keshaba N. Parida +2
Improved understanding of charge-transport in single molecules is essential for harnessing the potential of molecules e.g. as circuit components at the ultimate size limit. However…