H. von Wenckstern

collaborators

2 papers

cond-mat.mtrl-sci2020

Identification of Li $_{Ni}$ and V $_{Ni}$ acceptor levels in doped nickel oxide

Robert Karsthof, Holger von Wenckstern, Marius Grundmann

Nickel oxide, in particular in its doped, semiconducting form, is an important component of several optoelectronic devices. Doping NiO is commonly achieved either by incorporation…

physics.app-ph2020

SnO/ $β$ -Ga2O3 vertical $p n$ heterojunction diodes

Melanie Budde, Daniel Splith, Piero Mazzolini +6

Vertical $p n$ heterojunction diodes were prepared by plasma-assisted molecular beam epitaxy of unintentionally-doped $p$ -type SnO layers with hole concentrations ranging from $p=10…

Identification of LiNi​ and VNi​ acceptor levels in doped nickel oxide

SnO/β-Ga2O3 vertical pn heterojunction diodes

Identification of Li $_{Ni}$ and V $_{Ni}$ acceptor levels in doped nickel oxide

SnO/ $β$ -Ga2O3 vertical $p n$ heterojunction diodes