Defects in the ${\hat{I}}^2$-Ga${}_2$O${}_3$($\bar{2}01$)/HfO${}_2$ MOS system and the effect of thermal treatments

Khushabu. S. Agrawal, Paolo LaTorraca, Jonas Valentijn +9

We have investigated the properties of the ${\hat{I}}^2$-Ga${}_2$O${}_3$($\bar{2}01$)/HfO${}_2$/Cr/Au MOS (metal-oxide-semiconductor) system after annealing (450${}^{\circ }$C) in different ambient cond…