68 citations · 73 across the 2 of their papers we have counts for
2 papers
cond-mat.other2005★ 5 cited
Comparison of multiple-gate MOSFET architectures using Monte Carlo simulation
J. Saint-Martin, A. Bournel, P. Dollfus
Multiple-gate SOI MOSFETs with gate length equal to 25 nm are compared using device Monte Carlo simulation. In such architectures, the short channel effects may be controlled with…
cond-mat.mes-hall2003★ 68 cited
Effect of discrete impurities on electron transport in ultra-short MOSFET using 3D Monte Carlo simulation
P. Dollfus, A. Bournel, S. Galdin +2
This paper discusses the influence of the channel impurity distribution on the transport and the drive current in short-gate MOSFET. In this purpose, a careful description of elect…