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cond-mat.mes-hall2010
A nanoscale transistor based on gate-induced stochastic transitions
J. Bürki, C. A. Stafford, D. L. Stein
A nanoscale device consisting of a metal nanowire, a dielectric, and a gate is proposed. A combination of quantum and thermal stochastic effects enable the device to have multiple…
cond-mat.mes-hall2010★ 1 cited
The Nanoscale Free-Electron Model
D. F. Urban, J. Bürki, C. A. Stafford +1
A brief review of the nanoscale free-electron model of metal nanowires is presented. This continuum description of metal nanostructures allows for a unified treatment of cohesive a…