2 papers
cond-mat.mtrl-sci2002
Hafnium silicide formation on Si(001)
H. T. Johnson-Steigelman, A. V. Brinck, P. F. Lyman
Thick (~50 nm) films of Hf were evaporated onto bare and oxidized Si(001) samples, and thin (~monolayer) films of Hf were evaporated onto clean Si(001)-(2x1) surfaces. Upon anneali…
cond-mat.mtrl-sci2002
Production of a hafnium silicate dielectric layer for use as a gate oxide by solid-state reaction
H. T. Johnson-Steigelman, A. V. Brinck, P. F. Lyman
The formation of hafnium silicate films (HfSixOy) for use as gate oxides with large dielectric constant by solid state reaction of Hf metal and SiO2 was investigated. Thin, fully r…