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Torsional Force Microscopy of Van der Waals Moirés and Atomic Lattices
Mihir Pendharkar, Steven J. Tran, Gregory Zaborski +13
In a stack of atomically-thin Van der Waals layers, introducing interlayer twist creates a moiré superlattice whose period is a function of twist angle. Changes in that twist angle…
Ionic liquid gating of SrTiO lamellas fabricated with a focused ion beam
Evgeny Mikheev, Tino Zimmerling, Amelia Estry +2
In this work, we combine two previously-incompatible techniques for defining electronic devices: shaping three-dimensional crystals by focused ion beam (FIB), and two-dimensional e…
Nanoscale electronic transparency of wafer-scale hexagonal boron nitride
Caleb Z. Zerger, Linsey K. Rodenbach, Yi-Ting Chen +8
Monolayer hBN has attracted interest as a potentially weakly interacting 2D insulating layer in heterostructures. Recently, wafer-scale hBN growth on Cu(111) has been demonstrated…
Application-Driven Synthesis and Characterization of Hexagonal Boron Nitride on Metal and Carbon Nanotube Substrates
Victoria Chen, Yong Cheol Shin, Evgeny Mikheev +6
Hexagonal boron nitride (h-BN) is unique among two-dimensional materials, with a large band gap (~6 eV) and high thermal conductivity (>400 W/m/K), second only to diamond among ele…
Quantum-Hall to Insulator Transition in Ultra-low-carrier-density Topological Insulator Films and a Hidden Phase of the Zeroth Landau Level
Maryam Salehi, Hassan Shapourian, Ilan Thomas Rosen +6
A key feature of the topological surface state under a magnetic field is the presence of the zeroth Landau level at the zero energy. Nonetheless, it has been challenging to probe t…
Super-geometric electron focusing on the hexagonal Fermi surface of PdCoO
Maja D. Bachmann, Aaron L. Sharpe, Arthur W. Barnard +6
Geometric electron optics may be implemented in solid state when transport is ballistic on the length scale of a device. Currently, this is realized mainly in 2D materials characte…