3 papers
cond-mat.mtrl-sci2025
The effect of boron incorporation on leakage and wake-up in ferroelectric Al_{1-x}Sc_xN
Maike Gremmel, Chandrashekhar Prakash Savant, Debaditya Bhattacharya +3
This study explores the influence of boron incorporation on the structural and electrical properties of ferroelectric Aluminum Scandium Nitride (Al_{1-x}Sc_xN ) thin films, focusin…
cond-mat.mtrl-sci2025
Interfacial Polarization Switching in Al0.92Sc0.08N/GaN Heterostructures Grown by Sputter Epitaxy
Niklas Wolff, Georg Schönweger, Redwanul Md. Islam +4
The integration of ferroelectric nitride thin films such as Al1-xScxN onto GaN templates could enable enhanced functionality in novel high-power transistors and memory devices. Thi…
physics.app-ph2024
Improved Leakage Currents and Polarity Control through Oxygen Incorporation in Ferroelectric Al0.73Sc0.27N Thin Films
Md Redwanul Islam, Niklas Wolff, Georg Schönweger +8
This article examines systematic oxygen (O)-incorporation to reduce total leakage currents in sputtered wurtzite-type ferroelectric Al0.73Sc0.27N thin films, along with its impact…