2 papers
cond-mat.mtrl-sci2025
Ferroelectricity of Wurtzite AlHfN Heterovalent Alloys
Nate S. P. Bernstein, Daniel Drury, Cheng-Wei Lee +11
Thin films of aluminum hafnium nitride (AlHfN) were synthesized via reactive magnetron sputtering for Hf contents up to = 0.13. X-ray diffraction showed a single…
cond-mat.mtrl-sci2024
Long-term stability and oxidation of ferroelectric AlScN devices: An operando HAXPES study
Oliver Rehm, Lutz Baumgarten, Roberto Guido +6
Aluminum scandium nitride (AlScN) is a promising material for ferroelectric devices due to its large remanent polarization, scalability, and compatibility with semicond…