148 citations · 225 across the 10 of their papers we have counts for
10 papers
Variation of the hopping exponent in disordered silicon MOSFETs
T. Ferrus, R. George, C. H. W. Barnes +3
We observe a complex change in the hopping exponent value from 1/2 to 1/3 as a function of disorder strength and electron density in a sodium-doped silicon MOSFET. The disorder was…
Magnetoconductivity of Hubbard bands induced in Silicon MOSFETs
T. Ferrus, R. George, C. H. W. Barnes +3
Sodium impurities are diffused electrically to the oxide-semiconductor interface of a silicon MOSFET to create an impurity band. At low temperature and at low electron density, the…
Activation mechanisms in sodium-doped Silicon MOSFETs
T. Ferrus, R. George, C. H. W. Barnes +3
We have studied the temperature dependence of the conductivity of a silicon MOSFET containing sodium ions in the oxide above 20 K. We find the impurity band resulting from the pres…
Evidence for multiple impurity bands in sodium-doped silicon MOSFETs
T. Ferrus, R. George, C. H. W. Barnes +3
We report measurements of the temperature-dependent conductivity in a silicon metal-oxide-semiconductor field-effect transistor that contains sodium impurities in the oxide layer.…
Self-aligned fabrication process for silicon quantum computer devices
T. M. Buehler, R. P. McKinnon, N. E. Lumpkin +6
We describe a fabrication process for devices with few quantum bits (qubits), which are suitable for proof-of-principle demonstrations of silicon-based quantum computation. The dev…
Magnetic susceptibility of the normal-superconducting transition in high-purity single-crystal alpha-uranium
J. L. O'Brien, A. R. Hamilton, R. G. Clark +9
We report complex ac magnetic susceptibility measurements of a superconducting transition in very high-quality single-crystal alpha-uranium using microfabricated coplanar magnetome…