701 citations · 3.1k across the 11 of their papers we have counts for
6 papers · 1 filter
Temperature Dependence of Wavelength Selectable Zero-Phonon Emission from Single Defects in Hexagonal Boron Nitride
Nicholas R. Jungwirth, Brian Calderon, Yanxin Ji +3
We investigate the distribution and temperature-dependent optical properties of sharp, zero-phonon emission from defect-based single photon sources in multilayer hexagonal boron ni…
Emission of Terahertz Radiation from SiC
Jared H. Strait, Paul A. George, Jahan Dawlaty +4
We report the emission of strong coherent broadband terahertz radiation from 6H-Silicon-Carbide (SiC) excited with optical pulses. The measured terahertz spectral signal-to-noise r…
Thickness Estimation of Epitaxial Graphene on SiC using Attenuation of Substrate Raman Intensity
Shriram Shivaraman, M. V. S. Chandrashekhar, John J. Boeckl +1
A simple, non-invasive method using Raman spectroscopy for the estimation of the thickness of graphene layers grown epitaxially on silicon carbide (SiC) is presented, enabling simu…
Measurement of the Optical Absorption Spectra of Epitaxial Graphene from Terahertz to Visible
Jahan M. Dawlaty, Shriram Shivaraman, Jared Strait +6
We present experimental results on the optical absorption spectra of epitaxial graphene from the visible to the terahertz (THz) frequency range. In the THz range, the absorption is…
Measurement of Ultrafast Carrier Dynamics in Epitaxial Graphene
Jahan M. Dawlaty, Shriram Shivaraman, Mvs Chandrashekhar +2
Using ultrafast optical pump-probe spectroscopy, we have measured carrier relaxation times in epitaxial graphene layers grown on SiC wafers. We find two distinct time scales associ…
Growth and Characterization of Bulk Aluminum Nitride by Physical Vapor Transport
Tim K. Hossain, James V. Lindesay, Michael G. Spencer
A major issue in the development of the technology of nitride based materials is the choice of substrate. The structural and optical properties of the layers are intimately connect…