Degradation of 2.4-kV $G{a}_2{O}_3$ Schottky Barrier Diode at High Temperatures up to 500 °C

Hunter Ellis, Wei Jia, Imteaz Rahaman +5

Ga2O3 Schottky barrier diodes featuring a field plate and a composite SiO2/SiNx dielectric layer beneath the field plate were fabricated, achieving a breakdown voltage of 2.4 kV at…