14 citations · 14 across the 1 of their papers we have counts for
4 papers
Laser-assisted atom probe tomography of c-plane and m-plane InGaN test structures
N. A. Sanford, P. T. Blanchard, M. D. Brubaker +6
Laser-assisted atom probe tomography (APT) was used to measure the indium mole fraction x of c-plane, MOCVD-grown, GaN/In(x)Ga(1-x)N/GaN test structures and the results were compar…
Influence of surface structure and strain on indium segregation in InGaAs: a first-principles investigation
Soumya S. Bhat, Satadeep Bhattacharjee, Jung-Hae Choi +1
The surface segregation of indium atoms in InGaAs is investigated using first-principles calculations based on density functional theory. Through the calculation of segregation ene…
O- and H- induced surface core level shifts on Ru(0001): Prevalence of the additivity rule
S. Lizzit, Y. Zhang, K. L. Kostov +4
In previous work on adsorbate-induced surface core level shifts (SCLSs), the effects caused by O atom adsorption on Rh(111) and Ru(0001) were found to be additive: the measured shi…
Positive influence of ta addition on superconductive properties of high pressure synthesized MgB_2
T. Prikhna, W. Gawalek, N. Novikov +10
Bulk MgB2 - based materials with the following critical current densities (jc) in 1 T field: 570 kA/cm^2 at 10 K, 350 kA/cm^2 at 20 K and 40 kA/cm^2 at 30 K and in 10 T field: 650…