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researcher

Theodor S. Holstad

2 papers here

Matching runs newest-first, so older work may not be attached to this profile yet.

author position
  • first author1
  • middle author1

Across the 2 of 2 papers where every author was matched, so the position is known.

fields
  • cond-mat.mtrl-sci2
ORCID 0000-0002-6551-7938

identity via Semantic Scholar / OpenAlex

most citedElectronic bulk and domain wall properties in B-site doped hexagonal ErMnO3​

47 citations · 47 across the 2 of their papers we have counts for

collaborators

2 papers

cond-mat.mtrl-sci2020

Controlling local resistance via electric-field induced dislocations

D. M. Evans, D. R. Småbråten, T. S. Holstad +7

Dislocations are one-dimensional (1D) topological line defects where the lattice deviates from the perfect crystal structure. The presence of dislocations transcends condensed matt…

cond-mat.mtrl-sci2017★ 47 cited

Electronic bulk and domain wall properties in B-site doped hexagonal ErMnO3​

T. S. Holstad, D. M. Evans, A. Ruff +8

Acceptor and donor doping is a standard for tailoring semiconductors. More recently, doping was adapted to optimize the behavior at ferroelectric domain walls. In contrast to more…

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Not affiliated with arXiv. Researcher data from Semantic Scholar (ODC-BY) and OpenAlex.