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From the 1 of 14 linked papers with an AI index.

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20242026
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14 papers

cond-mat.mes-hall2026

Electric field controlled spin transport in a topological insulator interfaced with a ferroelectric antiferromagnet

Yogesh Kumar, Pushpendra Gupta, Xinyan Li +14

The paper demonstrates electric‑field control of spin‑charge conversion in a Bi₂Te₃ topological insulator interfaced with a ferroelectric antiferromagnet BiFeO₃, using a nonlocal s…

cond-mat.mtrl-sci2026

A Magnon-Based Electric Field Controlled Magnetoelectric Device for Energy-Efficient Logic-in-Memory

Rongqing Cong, Sajid Husain, Yumin Su +6

We demonstrate a non-volatile magnetoelectric magnonic memory (MEMM) that enables fully electrical write/read via direct magnon-driven sensing in an insulating antiferromagnet. A f…

cond-mat.mtrl-sci2026

Mapping Metastable Magnetic Textures in (Fe0.5Co0.5)5GeTe2 with in-situ Lorentz Transmission Electron Microscopy

Reed Yalisove, Hongrui Zhang, Xiang Chen +5

Topologically protected magnetic textures are a promising route to low-energy control of magnetism, but they are most often studied away from ambient conditions, typically at low t…

cond-mat.mtrl-sci2026

Topological textures and emergent altermagnetic signatures in ultrathin BiFeO3

George Fratian, Maya Ramesh, Xinyan Li +23

Magnetoelectric multiferroics, materials with intrinsically coupled electric polarization and magnetic order, promise ultralow-power switching, nonvolatile memory, and energy-effic…

cond-mat.mtrl-sci2025

Symmetry-designed BiFeO3 single domain spin cycloid for efficient spintronics

Pratap Pal, Jonathon L. Schad, Anuradha M. Vibhakar +16

Deterministic control of coupled ferroelectric and antiferromagnetic orders remains a central challenge in multiferroics, limiting their integration into functional magnetoelectric…

cond-mat.mtrl-sci2025

Revealing Atomic-Scale Switching Pathways in van der Waals Ferroelectrics

Xinyan Li, Kenna Ashen, Chuqiao Shi +9

Two-dimensional van der Waals (vdW) materials hold the potential for ultra-scaled ferroelectric (FE) devices due to their silicon compatibility and robust polarization down to atom…