2 papers
quant-ph2026
Impact of strain and dark states on spectroscopic measurements of silicon-vacancy centers in diamond
Tommy Chin, Kesav V. Narayan, Imran Bashir +4
Negatively charged silicon-vacancy (SiV) centers in diamond offer an attractive platform for the development of many forms of quantum technology. However, questions remain in c…
cond-mat.mes-hall2024
Nanoscale single-electron box with a floating lead for quantum sensing: modelling and device characterization
Nikolaos Petropoulos, Xutong Wu, Andrii Sokolov +7
We present an in-depth analysis of a single-electron box (SEB) biased through a floating node technique that is common in charge-coupled devices (CCDs). The device is analyzed and…