most citedFabrication of Germanium-on-insulator in a Ge wafer with a crystalline Ge top layer and buried GeO2 layer by Oxygen ion implantation

7 citations · 7 across the 1 of their papers we have counts for

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1 paper

cond-mat.mtrl-sci2020★ 7 cited

Fabrication of Germanium-on-insulator in a Ge wafer with a crystalline Ge top layer and buried GeO2 layer by Oxygen ion implantation

Vishal Kumar Aggarwal, Ankita Ghatak, Dinakar Kanjilal +6

The paper reports fabrication of Germanium-on-Insulator (GeOI) wafer by Oxygen ion implantation of an undoped single crystalline Ge wafer of orientation (100). Oxygen ions of energ…