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cond-mat.mtrl-sci2025

Al0.68Sc0.32N/SiC based metal-ferroelectric-semiconductor capacitors operating up to 1000 °C

Yunfei He, David C. Moore, Yubo Wang +9

Ferroelectric (Fe) materials-based devices show great promise for non-volatile memory applications, yet few demonstrate reliable operation at elevated temperatures. In this work, w…