Cryogenic-temperature Grain-to-grain Epitaxial Growth of High-quality Ultrathin CoFe Layer on MgO Tunnel Barrier for High-performance Magnetic Tunnel Junctions

Tomohiro Ichinose, Tatsuya Yamamoto, Takayuki Nozaki +3

One candidate for ultimate non-volatile memory with ultralow power consumption is magneto-resistive random-access memory (VC-MRAM). To develop VC-MRAM, it is important to fabricate…