From the 1 of 10 linked papers with an AI index.
3 citations · 3 across the 3 of their papers we have counts for
10 papers
Mapping g-factors and complex intervalley coupling in Si/SiGe by conveyor-mode shuttling
Mats Volmer, Tom Struck, Arnau Sala +7
The authors present a technique to map nanoscale variations of the electron g‑factor and complex intervalley coupling in planar Si/SiGe quantum dots by shuttling entangled spin pai…
Impact of the local valley splitting on the coherence of conveyor-belt spin shuttling in Si/SiGe
Mats Volmer, Tom Struck, Jhih-Sian Tu +6
Silicon quantum chips offer a promising path toward scalable, fault-tolerant quantum computing, with the potential to host millions of qubits. However, scaling up dense quantum-dot…
Sharp periodic Ge concentration modulations beyond the conduction band valley wavevector in nuclear spin-free Si quantum wells
Ivo Rahlff, Carsten Richter, Martin Schmidbauer +13
Periodic Ge modulations within strained Si quantum wells in SiGe heterostructures offer a route to deterministically enhance conduction-band valley splitting in Si, a key requireme…
Singlet-triplet oscillations in multivalley Si double quantum dots
Åukasz CywiÅski, Mats Volmer, Tom Struck +2
Charge separation from the to the state in a Si/SiGe double quantum dot is commonly used for initialization of spin qubits and Pauli-spin-blockade readout. It was u…
Fabrication, characterization and mechanical loading of Si/SiGe membranes for spin qubit devices
Lucas Marcogliese, Ouviyan Sabapathy, Rudolf Richter +3
Si/SiGe heterostructures on bulk Si substrates have been shown to host high fidelity electron spin qubits. Building a scalable quantum processor would, however, benefit from furthe…
Conveyor-mode electron shuttling through a T-junction in Si/SiGe
Max Beer, Ran Xue, Lennart Deda +6
Conveyor-mode shuttling in gated Si/SiGe devices enables adiabatic transfer of single electrons, electron patterns and spin qubits confined in quantum dots across several microns w…