From the 1 of 5 linked papers with an AI index.
3 citations · 3 across the 2 of their papers we have counts for
5 papers
Enhanced intrinsic spin-orbit driving of a Loss-DiVincenzo qubit near the spin-valley hotspot in Si/SiGe
Alexander Willmes, Max Oberländer, Max Beer +7
In most Si/SiGe-based spin qubit implementations, high-fidelity single-qubit gates are achieved using micromagnets, which enable the use of electric spin dipole resonance via synth…
Mapping g-factors and complex intervalley coupling in Si/SiGe by conveyor-mode shuttling
Mats Volmer, Tom Struck, Arnau Sala +7
The authors present a technique to map nanoscale variations of the electron g‑factor and complex intervalley coupling in planar Si/SiGe quantum dots by shuttling entangled spin pai…
Impact of the local valley splitting on the coherence of conveyor-belt spin shuttling in Si/SiGe
Mats Volmer, Tom Struck, Jhih-Sian Tu +6
Silicon quantum chips offer a promising path toward scalable, fault-tolerant quantum computing, with the potential to host millions of qubits. However, scaling up dense quantum-dot…
Fabrication, characterization and mechanical loading of Si/SiGe membranes for spin qubit devices
Lucas Marcogliese, Ouviyan Sabapathy, Rudolf Richter +3
Si/SiGe heterostructures on bulk Si substrates have been shown to host high fidelity electron spin qubits. Building a scalable quantum processor would, however, benefit from furthe…
Conveyor-mode electron shuttling through a T-junction in Si/SiGe
Max Beer, Ran Xue, Lennart Deda +6
Conveyor-mode shuttling in gated Si/SiGe devices enables adiabatic transfer of single electrons, electron patterns and spin qubits confined in quantum dots across several microns w…