From the 1 of 4 linked papers with an AI index.
4 papers
Self-organized defect clustering and concentration-dependent vacancy diffusion in MoS
Aaron Flötotto, Benjamin Spetzler, Martin Ziegler +2
The paper uses kinetic Monte‑Carlo simulations, informed by machine‑learning interatomic potentials, to study how sulfur vacancies in MoS₂ cluster and diffuse, revealing concentrat…
Numerical analysis and simulation of lateral memristive devices: Schottky, ohmic, and multi-dimensional electrode models
Dilara Abdel, Maxime Herda, Martin Ziegler +3
In this paper, we present the numerical analysis and simulations of a multi-dimensional memristive device model. Memristive devices and memtransistors based on two-dimensional (2D)…
Large-scale cooperative sulfur vacancy dynamics in two-dimensional MoS2 from machine learning interatomic potentials
Aaron Flötotto, Benjamin Spetzler, Rose von Stackelberg +3
The formation of extended sulfur vacancies in MoS2 monolayers is closely associated with catalytic activity and may also be the basis for its memristive behavior. Nanosecond-scale…
Physics-Guided Sequence Modeling for Fast Simulation and Design Exploration of 2D Memristive Devices
Benjamin Spetzler, Elizaveta Spetzler, Saba Zamankhani +4
Modeling hysteretic switching dynamics in memristive devices is computationally demanding due to coupled ionic and electronic transport processes. This challenge is particularly re…