110 citations · 119 across the 4 of their papers we have counts for
4 papers
Self-diffusion on Si(001) mono-hydride surfaces revisited: The role of adatom clustering
Gefei Qian, Xuan Luo, S. B. Zhang +3
First-principles total-energy calculations of the H/Si(001)-2x1 surfaces reveals a dual diffusion process for the Si adatoms: single along the dimer row while pairing up across the…
Calculations on Electronic States in QDs woth Saturated Shapes
Wei Cheng, Shang-Fen Ren
Electronic States of Si and Ge QDs of 5 to 3127 atoms with saturated shapes in a size range of 0.57 to 4.92 nm for Si and 0.60 to 5.13 nm for Ge are calculated by using an empirica…
Calculations on the Size Effects of Raman Intensities of Silicon Quantum Dots
Wei Cheng, Shang-Fen Ren
Raman intensities of Si quantum dots (QDs) with up to 11,489 atoms (about 7.6 nm in diameter) for different scattering configurations are calculated. First, phonon modes in these Q…
Microscopic interface phonon modes in structures of GaAs quantum dots embedded in AlAs shells
Shang-Fen Ren, G. Qin
By means of a microscopic valence force field model, a series of novel microscopic interface phonon modes are identified in shell quantum dots(SQDs) composed of a GaAs quantum dot…