Quantifying Flat-Band Voltage in Si Metal-Oxide-Semiconductor Structures: An Evaluation via Terahertz Emission Spectroscopy (TES)

Dongxun Yang, Tonouchi Masayoshi

Laser-induced Terahertz (THz) Emission Spectroscopy (TES) has demonstrated its potential utility in the realm of Metal-Oxide-Semiconductor (MOS) devices as an expedient and noncont…