From the 1 of 6 linked papers with an AI index.
6 papers
Second-Order Optical Nonlinearity of AlScN Films Grown By Molecular Beam Epitaxy
Joongwon Lee, Thai-Son Nguyen, Len van Deurzen +8
The paper measures the second‑order optical nonlinearity of AlScN films grown by molecular beam epitaxy directly on nitrided c‑plane sapphire, finding a greatly enhanced d31 coeffi…
Shubnikov-de Haas oscillations of two-dimensional electron gases in AlYN/GaN and AlScN/GaN heterostructures
Yu-Hsin Chen, Thai-Son Nguyen, Isabel Streicher +4
AlYN and AlScN have recently emerged as promising nitride materials that can be integrated with GaN to form two-dimensional electron gases (2DEGs) at heterojunctions. Electron tran…
High Mobility Multiple-Channel AlScN/GaN Heterostructures
Aias Asteris, Thai-Son Nguyen, Chuan F. C. Chang +4
Aluminum scandium nitride (AlScN) is a promising barrier material for gallium nitride (GaN)-based transistors for the next generation of radio-frequency electronic devices. In this…
A Compact Model for Polar Multiple-Channel Field Effect Transistors: A Case Study in III-V Nitride Semiconductors
Aias Asteris, Thai-Son Nguyen, Huili Grace Xing +1
A compact analytical model is developed for the mobile charge density of polar multiple channel field effect transistors. Two dimensional electron and hole gases can be potentially…
Epitaxial high-K AlBN barrier GaN HEMTs
Chandrashekhar Savant, Thai-Son Nguyen, Kazuki Nomoto +8
We report a polarization-induced 2D electron gas (2DEG) at an epitaxial AlBN/GaN heterojunction grown on a SiC substrate. Using this 2DEG in a long conducting channel, we realize u…
Lattice-Matched Multiple Channel AlScN/GaN Heterostructures
Thai-Son Nguyen, Naomi Pieczulewsi, Chandrashekhar Savant +6
AlScN is a new wide bandgap, high-k, ferroelectric material for RF, memory, and power applications. Successful integration of high quality AlScN with GaN in epitaxial layer stacks…