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19942026
most citedFormation and life-time of memory domains in the dissipative quantum model of brain

38 citations · 372 across the 57 of their papers we have counts for

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Showing cond-mat.stat-mechShow all

8 papers · 1 filter

cond-mat.stat-mech2021★ 1 cited

Stefan-Boltzmann law revisited

Lino Reggiani, Eleonora Alfinito

The Stefan-Boltzmann (SB) law relates the emissivity , given in , of an ideal black-body cavity at thermal equilibrium to the fourth power of the absolute temperature $…

cond-mat.stat-mech2018

Fluctuation dissipation theorem and electrical noise revisited

Lino Reggiani, Eleonora Alfinito

The fluctuation dissipation theorem (FDT) is the basis for a microscopic description of the interaction between electromagnetic radiation and matter.By assuming the electromagnetic…

cond-mat.stat-mech2016★ 7 cited

Duality and reciprocity of fluctuation-dissipation relations in conductors

Lino Reggiani, Eleonora Alfinito, Tilmann Kuhn

By analogy with linear-response we formulate the duality and reciprocity properties of current and voltage fluctuations expressed by Nyquist relations including the intrinsic bandw…

cond-mat.stat-mech2012★ 1 cited

Generalized Gumbel distribution of current fluctuations in purple membrane monolayers

Eleonora Alfinito, Lino Reggiani

We investigate the nature of a class of probability density functions, say G(a), with a the shape parameter, which generalizes the Gumbel distribution. These functions appear in a…

cond-mat.stat-mech2005

Non-Gaussian Fluctuations in Biased Resistor Networks: Size Effects versus Universal Behavior

C. Pennetta, E. Alfinito, L. Reggiani +1

We study the distribution of the resistance fluctuations of biased resistor networks in nonequilibrium steady states. The stationary conditions arise from the competition between t…

cond-mat.stat-mech2004★ 34 cited

A Biased Resistor Network Model for Electromigration Failure and Related Phenomena in Metallic Lines

C. Pennetta, E. Alfinito, L. Reggiani +3

Electromigration phenomena in metallic lines are studied by using a biased resistor network model. The void formation induced by the electron wind is simulated by a stochastic proc…