collaborators

1 paper

cond-mat.mtrl-sci2025

In-poor IGZO: superior resilience to hydrogen in forming gas anneal and PBTI

A. Kruv, M. J. van Setten, A. Chasin +12

Integrating In-Ga-Zn-oxide (IGZO) channel transistors in silicon-based ecosystems requires the resilience of the channel material to hydrogen treatment. Standard IGZO, containing 4…