collaborators

5 papers

cs.AR2025

A Systematic Approach for Multi-objective Double-side Clock Tree Synthesis

Xun Jiang, Haoran Lu, Yuxuan Zhao +8

As the scaling of semiconductor devices nears its limits, utilizing the back-side space of silicon has emerged as a new trend for future integrated circuits. With intense interest,…

cond-mat.mes-hall2025

Design Optimization of Flip FET Standard Cells with Dual-sided Pins for Ultimate Scaling

Rui Gui, Haoran Lu, Jiacheng Sun +7

Recently, we proposed a novel transistor architecture for 3D stacked FETs called Flip FET (FFET), featuring N/P transistors back-to-back stacked and dual-sided interconnects. With…

cond-mat.mes-hall2025

Overlay-aware Variation Study of Flip FET and Benchmark with CFET

Wanyue Peng, Haoran Lu, Jingru Jiang +5

In this work, we carried out an overlay-aware variation study on Flip FET (FFET) considering the impact on RC parasitics induced by the lithography misalignment in backside process…

physics.app-ph2025

A Tale of Two Sides of Wafer: Physical Implementation and Block-Level PPA on Flip FET with Dual-sided Signals

Haoran Lu, Xun Jiang, Yanbang Chu +7

As the conventional scaling of logic devices comes to an end, functional wafer backside and 3D transistor stacking are consensus for next-generation logic technology, offering cons…

cond-mat.mes-hall2024

From Flip FET to Flip 3D Integration (F3D): Maximizing the Scaling Potential of Wafer Both Sides Beyond Conventional 3D Integration

Heng Wu, Haoran Lu, Wanyue Peng +13

In this work, we proposed a new 3D integration technology: the Flip 3D integration (F3D), consisting of the 3D transistor stacking, the 3D dual-sided interconnects, the 3D die-to-d…