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19992011
most citedScattering at the Anderson transition: Power--law banded random matrix model

23 citations · 45 across the 7 of their papers we have counts for

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9 papers · 1 filter

cond-mat.dis-nn20077 cited

Entanglement in Disordered Systems at Criticality

Imre Varga, Jose Antonio Mendez-Bermudez

Entanglement is a physical resource of a quantum system just like mass, charge or energy. Moreover it is an essential tool for many purposes of nowadays quantum information process…

cond-mat.dis-nn2007

Electron-electron Relaxation in Disordered Interacting Systems

Peter Bozsoki, Imre Varga, Henning Schomerus

We study the relaxation of a non-equilibrium carrier distribution under the influence of the electron-electron interaction in the presence of disorder. Based on the Anderson model,…

cond-mat.dis-nn2007

Analytical Analysis of Single-Photon Correlations Emitted by Disordered Semiconductor Heterostructures

P. Bozsoki, W. Hoyer, M. Kira +4

In a recent publication [Phys. Rev. Lett. 97, 227402 (2006), cond-mat/0611411], it has been demonstrated numerically that a long-range disorder potential in semiconductor quantum w…

cond-mat.dis-nn20069 cited

Characterization of Disorder in Semiconductors via Single-Photon Interferometry

P. Bozsoki, P. Thomas, M. Kira +6

The method of angular photonic correlations of spontaneous emission is introduced as an experimental, purely optical scheme to characterize disorder in semiconductor nanostructures…

cond-mat.dis-nn200623 cited

Scattering at the Anderson transition: Power--law banded random matrix model

J. A. Mendez-Bermudez, I. Varga

We analyze the scattering properties of a periodic one-dimensional system at criticality represented by the so-called power-law banded random matrix model at the metal insulator tr…

cond-mat.dis-nn2005

Microscopic modeling of photoluminescence of strongly disordered semiconductors

P. Bozsoki, M. Kira, W. Hoyer +4

A microscopic theory for the luminescence of ordered semiconductors is modified to describe photoluminescence of strongly disordered semiconductors. The approach includes both diag…