From the 2 of 21 linked papers with an AI index.
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Second-Order Optical Nonlinearity of AlScN Films Grown By Molecular Beam Epitaxy
Joongwon Lee, Thai-Son Nguyen, Len van Deurzen +8
The paper measures the second‑order optical nonlinearity of AlScN films grown by molecular beam epitaxy directly on nitrided c‑plane sapphire, finding a greatly enhanced d31 coeffi…
Dependence of the Mn sticking coefficient on Ga-rich, N-rich, and Ga/N-flux-free conditions in GaN grown by plasma-assisted molecular beam epitaxy
YongJin Cho, Changkai Yu, Huili Grace Xing +1
This brief report examines the influence of Ga/N flux conditions on Mn incorporation in GaN. Mn-doped GaN layers were grown at 680C by molecular beam epitaxy on a Ga-pola…
Low Resistance Non-Alloyed Ohmic Contacts to High Al Composition n-type AlGaN
Joseph E. Dill, Xianzhi Wei, Changkai Yu +6
Ohmic contacts to high (>70\%) Al content n-type AlGaN ultra-wide bandgap semiconductor layers in nitride electronic and photonic devices are typically fabricated by a…
Improved operating voltage in InGaN-capped AlGaN-based DUV LEDs on bulk AlN substrates
H-W S. Huang, S. Agrawal, D. Bhattacharya +2
Better wall plug efficiency of deep-ultraviolet light emitting diodes (DUV-LEDs) requires simultaneous low resistivity p-type and n-type contacts, which is a challenging problem. I…
Generalized quantum limits of electrical contact resistance and thermal boundary resistance
Alice Ho, Jashan Singhal, Deji Akinwande +2
The importance of electrical contact resistance and thermal boundary resistance has increased dramatically as devices are scaled to atomic limits. The use of a rich range of materi…
XHEMTs on Ultrawide Bandgap Single-Crystal AlN Substrates
Eungkyun Kim, Yu-Hsin Chen, Naomi Pieczulewski +4
AlN has the largest bandgap in the wurtzite III-nitride semiconductor family, making it an ideal barrier for a thin GaN channel to achieve strong carrier confinement in field-effec…