From the 2 of 20 linked papers with an AI index.
20 papers
High-Q superconducting microwave resonators using MBE titanium nitride
Anand Ithepalli, Haoran Lu, Eegene Clara Chung +9
The authors use molecular beam epitaxy to grow high-quality TiN thin films on sapphire, achieving very low X‑ray rocking curve widths and superconducting coplanar waveguide resonat…
Second-Order Optical Nonlinearity of AlScN Films Grown By Molecular Beam Epitaxy
Joongwon Lee, Thai-Son Nguyen, Len van Deurzen +8
The paper measures the second‑order optical nonlinearity of AlScN films grown by molecular beam epitaxy directly on nitrided c‑plane sapphire, finding a greatly enhanced d31 coeffi…
Cryogenic Loss Limits in Microwave Epitaxial AlN Acoustic Resonators
Hemant Gulupalli, Navnil Choudhury, Jiacheng Xie +6
Aluminum nitride (AlN)-based thin-film bulk acoustic wave resonators (FBARs) are promising compact platforms for 6G communications and quantum memory hardware, enabled by their int…
Shubnikov-de Haas oscillations of two-dimensional electron gases in AlYN/GaN and AlScN/GaN heterostructures
Yu-Hsin Chen, Thai-Son Nguyen, Isabel Streicher +4
AlYN and AlScN have recently emerged as promising nitride materials that can be integrated with GaN to form two-dimensional electron gases (2DEGs) at heterojunctions. Electron tran…
Edge emission from 265~nm UV-C LEDs grown by MBE on bulk AlN
Shivali Agrawal, Hsin-Wei S. Huang, Debaditya Bhattacharya +6
UV-C LEDs pseudomorphically grown by MBE on bulk AlN substrates emitting at 265 nm are demonstrated. High current density up to 800 A/cm, 5 orders of on/off ratio, and low diff…
Low Resistance Non-Alloyed Ohmic Contacts to High Al Composition n-type AlGaN
Joseph E. Dill, Xianzhi Wei, Changkai Yu +6
Ohmic contacts to high (>70\%) Al content n-type AlGaN ultra-wide bandgap semiconductor layers in nitride electronic and photonic devices are typically fabricated by a…