21 citations · 78 across the 12 of their papers we have counts for
4 papers · 1 filter
Kinetic model of II-VI(001) semiconductor surfaces: Growth rates in atomic layer epitaxy
T. Volkmann, M. Ahr, M. Biehl
We present a zinc-blende lattice gas model of II-VI(001) surfaces, which is investigated by means of Kinetic Monte Carlo (KMC) simulations. Anisotropic effective interactions betwe…
Surface properties of epitaxially grown crystals
Martin Ahr
We present models of surfaces of crystals in an environment where molecular beam epitaxy (MBE) and related methods of crystal growth like atomic layer epitaxy (ALE) can be performe…
Modelling (001) surfaces of II-VI semiconductors
M. Ahr, M. Biehl, T. Volkmann
First, we present a two-dimensional lattice gas model with anisotropic interactions which explains the experimentally observed transition from a dominant c(2x2) ordering of the CdT…
Kinetic Monte Carlo Simulations of dislocations in heteroepitaxial growth
F. Much, M. Ahr, M. Biehl +1
We determine the critical layer thickness for the appearance of misfit dislocations as a function of the misfit between the lattice constants of the substrate and the adsorbate fro…