Properties of a radiation-induced charge multiplication region in epitaxial silicon diodes

Jörn Lange, Julian Becker, Eckhart Fretwurst +2

Charge multiplication (CM) in p${}^{+}$n epitaxial silicon pad diodes of 75, 100 and 150 $\upmu$m thickness at high voltages after proton irradiation with 1 MeV neutron equivalent flue…