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physics.ins-det2010★ 37 cited
Properties of a radiation-induced charge multiplication region in epitaxial silicon diodes
Jörn Lange, Julian Becker, Eckhart Fretwurst +2
Charge multiplication (CM) in pn epitaxial silicon pad diodes of 75, 100 and 150 $\upmu$m thickness at high voltages after proton irradiation with 1 MeV neutron equivalent flue…
physics.ins-det2002★ 5 cited
Radiation Damage in Silicon Detectors Caused by Hadronic and Electromagnetic Irradiation
E. Fretwurst, G. Lindstrom, I. Pintilie +1
The report contains various aspects of radiation damage in silicon detectors subjected to high intensity hadron and electromagnetic irradiation. It focuses on improvements for the…