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physics.ins-det2010★ 37 cited
Properties of a radiation-induced charge multiplication region in epitaxial silicon diodes
Jörn Lange, Julian Becker, Eckhart Fretwurst +2
Charge multiplication (CM) in pn epitaxial silicon pad diodes of 75, 100 and 150 $\upmu$m thickness at high voltages after proton irradiation with 1 MeV neutron equivalent flue…
physics.ins-det2010
Measurements of charge carrier mobilities and drift velocity saturation in bulk silicon of <111> and <100> crystal orientation at high electric fields
Julian Becker, Eckhart Fretwurst, Robert Klanner
The mobility of electrons and holes in silicon depends on many parameters. Two of them are the electric field and the temperature. It has been observed previously that the mobility…