most citedDissociative photoionization of EUV lithography photoresist models

10 citations · 23 across the 5 of their papers we have counts for

collaborators

5 papers

cond-mat.mtrl-sci2025★ 4 cited

Impact of Mechanical Stress on IGZO TFTs: Enhancing PBTI Degradation

K. Vishwakarma, K. Lee, A. Kruv +8

This study investigates the impact of out-of-plane compressive mechanical stress (MS) on the performance and reliability of n-channel IGZO thin film transistors (TFTs). It is demon…

physics.app-ph2025★ 6 cited

The impact of process steps on nearly ideal subthreshold slope in 300-mm compatible InGaZnO TFT

Hongwei Tang, Dennis Lin, Subhali Subhechha +14

While we demonstrate a back-gated (BG) amorphous Indium-Gallium-Zinc-Oxide (a-IGZO) transistors with a nearly ideal subthreshold slope (SS) ~ 60 mV/dec. However, SS degrades when a…

cond-mat.mtrl-sci2025★ 3 cited

Fundamental Understanding of Exposure and Process Chemistry for Enhanced Lithography and Stability of Metal Oxide Resists

Kevin M. Dorney, Ivan Pollentier, Fabian Holzmeier +11

Metal oxide resists (MORs) have shown great promise for high resolution patterning in extreme ultraviolet (EUV) lithography, with potential for integration into high volume manufac…

cond-mat.mtrl-sci2025

Unraveling the Reaction Mechanisms in a Chemically Amplified EUV Photoresist from a Combined Theoretical and Experimental Approach

Laura Galleni, Dhirendra P. Singh, Thierry Conard +5

Extreme ultraviolet (EUV) lithography has revolutionized high-volume manufacturing of nanoscale components, enabling the production of smaller, denser, and more energy efficient in…

cond-mat.mtrl-sci2024★ 10 cited

Dissociative photoionization of EUV lithography photoresist models

Marziogiuseppe Gentile, Marius Gerlach, Robert Richter +4

The dissociative photoionization of \textit{tert}-butyl methyl methacrylate, a monomer unit found in many ESCAP resists, was investigated in a gas phase photoelectron photoion coin…