Showing cond-mat.mtrl-sciShow all
2 papers · 1 filter
cond-mat.mtrl-sci2025
Sensitivity of Multislice Electron Ptychography to Point Defects: A Case Study in SiC
Aaditya Bhat, Colin Gilgenbach, Junghwa Kim +3
Here, we evaluate multislice electron ptychography as a tool to carry out depth-resolved atomic resolution characterization of point defects, using silicon carbide as a case study.…
cond-mat.mtrl-sci2025
Quantifying Implantation Induced Damage and Point Defects with Multislice Electron Ptychography
Junghwa Kim, Colin Gilgenbach, Aaditya Bhat +1
Here, we use multislice electron ptychography to quantify damage introduced by ion implantation of Er into 4H-SiC. Comparing reconstructed volumes from experiment (each 2,000 nm$^{…