most citedPhysical insights into the operation of a 1-nm gate length transistor based on MoS2 with metallic carbon nanotube gate

6 citations · 6 across the 2 of their papers we have counts for

collaborators

2 papers

cond-mat.mes-hall2020

Lateral Heterostructure Field-Effect Transistors Based on 2D-Material Stacks With Varying Thickness and Energy Filtering Source

Enrique G. Marin, Damiano Marian, Marta Perucchini +2

The bandgap dependence on the number of atomic layers of some families of 2D-materials, can be exploited to engineer and use lateral heterostructures (LHs) as high-performance Fiel…

cond-mat.mes-hall2019★ 6 cited

Physical insights into the operation of a 1-nm gate length transistor based on MoS2 with metallic carbon nanotube gate

Marta Perucchini, Enrique G. Marin, Damiano Marian +2

Low-dimensional materials such as layered semiconductors or carbon nanotubes (CNTs) have been attracting increasing attention in the last decades due to their inherent scaling prop…