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physics.app-ph2019
Cryogenic MOSFET Threshold Voltage Model
Arnout Beckers, Farzan Jazaeri, Christian Enz
This paper presents a physics-based model for the threshold voltage in bulk MOSFETs valid from room down to cryogenic temperature (4.2 K). The proposed model is derived from Poisso…
physics.app-ph2018
Design-oriented Modeling of 28 nm FDSOI CMOS Technology down to 4.2 K for Quantum Computing
Arnout Beckers, Farzan Jazaeri, Heorhii Bohuslavskyi +3
In this paper a commercial 28-nm FDSOI CMOS technology is characterized and modeled from room temperature down to 4.2 K. Here we explain the influence of incomplete ionization and…
physics.app-ph2018
Negative Capacitance as Digital and Analog Performance Booster for Complementary MOS Transistors
Ali Saeidi, Farzan Jazaeri, Igor Stolichnov +2
Boltzmann tyranny poses a fundamental limit to lowering the energy dissipation of conventional MOS devices, a minimum increase of the gate voltage, i.e. 60 mV, is required for a 10…