4 papers
Scalable thru-hole epitaxy of GaN through self-adjusting -BN masks via solution-processed 2D stacks
Jongwoo Ha, Minah Choi, Jieun Yang +1
Selective epitaxy on 2D-material masks is a promising pathway for achieving localized, defect-suppressed GaN growth, but conventional 2D transfer processes limit scalability and in…
Highly tunable moiré superlattice potentials in twisted hexagonal boron nitrides
Kwanghee Han, Minhyun Cho, Taehyung Kim +8
Moiré superlattice of twisted hexagonal boron nitride (hBN) has emerged as an advanced atomically thin van der Waals interfacial ferroelectricity platform. Nanoscale periodic ferr…
Moiré exciton polaron engineering via twisted hBN
Minhyun Cho, Biswajit Datta, Kwanghee Han +11
Twisted hexagonal boron nitride (thBN) exhibits emergent ferroelectricity due to the formation of moiré superlattices with alternating AB and BA domains. These domains possess ele…
Spin-orbit-splitting-driven nonlinear Hall effect in NbIrTe4
Ji-Eun Lee, Aifeng Wang, Shuzhang Chen +13
The Berry curvature dipole (BCD) serves as a one of the fundamental contributors to emergence of the nonlinear Hall effect (NLHE). Despite intense interest due to its potential for…