326 citations · 891 across the 18 of their papers we have counts for
18 papers
Scalable, Highly Crystalline, 2D Semiconductor Atomic Layer Deposition Process for High Performance Electronic Applications
Nikolaos Aspiotis, Katrina Morgan, Benjamin März +6
This work demonstrates a large area process for atomically thin 2D semiconductors to unlock the technological upscale required for their commercial uptake. The new atomic layer dep…
Low energy switching of phase change materials using a 2D thermal boundary layer
Jing Ning, Yunzheng Wang, Ting Yu Teo +7
The switchable optical and electrical properties of phase change materials (PCMs) are finding new applications beyond data storage in reconfigurable photonic devices. However, high…
Time-resolved reversible optical switching of the ultralow-loss phase change material Sb2Se3
Daniel Lawson, Daniel W. Hewak, Otto L. Muskens +1
The antimony-based chalcogenide Sb2Se3 is a rapidly emerging material for photonic phase change applications owing to its ultra-low optical losses at telecommunication wavelengths…
Fabrication and characterization of femtosecond laser written waveguides in chalcogenide glass
M. Hughes, W. Yang, D. Hewak
The authors describe the fabrication of buried waveguides in a highly nonlinear chalcogenide glass, gallium lanthanum sulfide, using focused femtosecond laser pulses. Through optic…
Enhanced Meta-Displays Using Advanced Phase-Change Materials
Omid Hemmatyar, Sajjad Abdollahramezani, Ioannis Zeimpekis +12
Structural colors generated due to light scattering from static all-dielectric metasurfaces have successfully enabled high-resolution, high-saturation, and wide-gamut color printin…
Towards low loss non-volatile phase change materials in mid index waveguides
Joaquin Faneca, Ioannis Zeimpekis, S. T. Ilie +4
Photonic integrated circuits currently use platform intrinsic thermo-optic and electro-optic effects to implement dynamic functions such as switching, modulation and other processi…
Non-volatile programmable silicon photonics using an ultralow loss SbSe phase change material
Matthew Delaney, Ioannis Zeimpekis, Han Du +5
Adaptable, reconfigurable and programmable are key functionalities for the next generation of silicon-based photonic processors, neural and quantum networks. Phase change technolog…
Intense Anti-Stokes Emission of Erbium Ions in Gallium Lanthanum Sulphide-Oxide Glass in Visible Spectral Range
M. M. Voronov, A. B. Pevtsov, A. P. Skvortsov +5
Photoluminescence spectra have been investigated in erbium doped GaLaS(O) glasses. The samples demonstrate intense green emission bands centered at around 525 and 550 nm due to up-…
Observation of Complete Photonic Bandgap in Low Refractive Index Contrast Inverse Rod-Connected Diamond Structured Chalcogenides
Lifeng Chen, Katrina A. Morgan, Ghada A. Alzaidy +9
Three-dimensional complete photonic bandgap materials or photonic crystals block light propagation in all directions. The rod-connected diamond structure exhibits the largest photo…
Transition Metal Chalcogenide Tin Sulfide Nanodimensional Films Align Liquid Crystals
Asi Solodar, Ghadah AlZaidy, Chung-Che Huang +2
Transition metal chalcogenide tin sulfide (SnS) films as alternative noncontact alignment layer for liquid crystals, have been demonstrated and investigated. The SnS has an anisotr…
Chalcogenide Glass-on-Graphene Photonics
Hongtao Lin, Yi Song, Yizhong Huang +16
Two-dimensional (2-D) materials are of tremendous interest to integrated photonics given their singular optical characteristics spanning light emission, modulation, saturable absor…
The transition from quantum field theory to one-particle quantum mechanics and a proposed interpretation of Aharonov-Bohm effect
Benliang Li, Daniel W. Hewak, Qi Jie Wang
In this article we demonstrate a sense in which the one-particle quantum mechanics (OPQM) and the classical electromagnetic four-potential arise from quantum field theory (QFT). In…
Electrical properties of Bi-implanted amorphous chalcogenide films
Yanina G. Fedorenko
The impact of Bi implantation on the conductivity and the thermopower of GeTe, Ge-Sb-Te, and Ga- La-S films is investigated. The enhanced conductivity appears to be notably sensiti…
Spectroscopy of vanadium (III) doped gallium lanthanum sulphide chalcogenide glass
M. Hughes, R. J. Curry, H. Rutt +1
Vanadium doped gallium lanthanum sulphide glass (V:GLS) displays three absorption bands at 580, 730 and 1155 nm identified by photoluminescence excitation measurements. Broad photo…
Concentration dependence of the fluorescence decay profile in transition metal doped chalcogenide glass
M. Hughes, D. W. Hewak, R. J. Curry
In this paper we present the fluorescence decay profiles of vanadium and titanium doped gallium lanthanum sulphide (GLS) glass at various doping concentrations between 0.01 and 1%…
n-Type Chalcogenides by Ion Implantation
Mark A. Hughes, Yanina Fedorenko, Behrad Gholipour +8
Carrier-type reversal to enable the formation of semiconductor p-n junctions is a prerequisite for many electronic applications. Chalcogenide glasses are p-type semiconductors and…
Electrical properties of Bi-implanted amorphous chalcogenide films
Yanina G. Fedorenko, Mark A. Hughes, Julien L. Colaux +9
The impact of Bi implantation on the conductivity and the thermopower of amorphous chalcogenide films is investigated. Incorporation of Bi in Ge-Sb-Te and GeTe results in enhanced…
Phase-change chalcogenide glass metamaterial
Z. L. Samson, K. F. MacDonald, F. De Angelis +5
Combining metamaterials with functional media brings a new dimension to their performance. Here we demonstrate substantial resonance frequency tuning in a photonic metamaterial hyb…