7 citations · 13 across the 7 of their papers we have counts for
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physics.app-ph2019★ 2 cited
Interfacial Thermal Conductance across Room-Temperature Bonded GaN-Diamond Interfaces for GaN-on-Diamond Devices
Zhe Cheng, Fengwen Mu, Luke Yates +2
The wide bandgap, high-breakdown electric field, and high carrier mobility makes GaN an ideal material for high-power and high-frequency electronics applications such as wireless c…
physics.app-ph2019★ 2 cited
High Thermal Boundary Conductance across Bonded Heterogeneous GaN-SiC Interfaces
Fengwen Mu, Zhe Cheng, Jingjing Shi +5
GaN-based HEMTs have the potential to be widely used in high-power and high-frequency electronics while their maximum output powers are limited by high channel temperature induced…