74 citations · 122 across the 6 of their papers we have counts for
6 papers
Synthesis of Group-IV ternary and binary semiconductors using epitaxy of and
Aixin Zhang, Dhruve A. Ringuala, Matthew A. Mircovich +3
alloys were grown on Ge buffer layers at ultra-low temperature using reactions of and for the first time. The latter is…
A practical theoretical model for Ge-like epitaxial diodes: I. The I-V characteristics
Matthew A. Mircovich, John Kouvetakis, José Menéndez
A practical quantitative model is presented to account for the I-V characteristics of pin diodes based on epitaxial Ge-like materials. The model can be used to quantify how the dif…
Consistent optical and electrical determination of carrier concentrations for the accurate modeling of the transport properties of n-type Ge
José Menéndez, Chi Xu, John Kouvetakis
A consistent methodology is presented to extract carrier concentrations in n-type Ge from measurements of the infrared dielectric function and the Hall effect. In the case of the o…
Mid-infrared (3-8 μm) alloys (0.15 < < 0.30): synthesis, structural, and optical properties
Chi Xu, Patrick M. Wallace, Dhruve A. Ringwala +4
alloys with compositions in the 0.15 < < 0.30 range have been grown directly on Si substrates using a chemical vapor deposition approach that allow…
Compositional dependence of the direct and indirect band gaps in alloys from room temperature photoluminescence
L. Jiang, J. D. Gallagher, C. L. Senaratne +4
The compositional dependence of the lowest direct and indirect band gaps in has been determined from room-temperature photoluminescence measurements.…
Direct vs. indirect optical recombination in Ge films grown on Si substrates
G. Grzybowski, R. Roucka, J. Mathews +3
The optical emission spectra from Ge films on Si are markedly different from their bulk Ge counterparts. Whereas bulk Ge emission is dominated by the material's indirect gap, the p…