29 citations · 123 across the 17 of their papers we have counts for
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AlN Nanowire Based Vertically Integrated Piezoelectric Nanogenerators
N. Buatip, T. Auzelle, P. John +8
In this study, detailed analysis of the direct piezo-response of AlN nanowire-based vertically integrated nanogenerators (VINGs) is undertaken as a function of mechanical excitatio…
External control of GaN band bending using phosphonate self-assembled monolayers
T. Auzelle, F. Ullrich, S. Hietzschold +7
We report on the optoelectronic properties of GaN and surfaces after their functionalization with phosphonic acid derivatives. To analyze the possible correl…
Enhanced radiative efficiency in GaN nanowires grown on sputtered TiN: effects of surface electric fields
T. Auzelle, M. Azadmand, T. Flissikowski +8
GaN nanowires grown by molecular beam epitaxy generally suffer from dominant nonradiative recombination, which is believed to originate from point defects. To suppress the formatio…
Electronic properties of air-exposed GaN and surfaces after several device processing compatible cleaning steps
Thomas Auzelle, Florian Ullrich, Sebastian Hietzschold +6
We report on the electronic properties of GaN and surfaces after three different and subsequent device processing compatible cleaning steps: HCl etching, ann…
Top-down fabrication of ordered arrays of GaN nanowires by selective area sublimation
Sergio Fernández-Garrido, Thomas Auzelle, Jonas Lähnemann +3
We demonstrate the top-down fabrication of ordered arrays of GaN nanowires by selective area sublimation of pre-patterned GaN(0001) layers grown by hydride vapor phase epitaxy on A…