Jinwoo Hwang

collaborators

2 papers

physics.app-ph2025

Electrical and Structural Properties of In-Situ MOCVD Grown Al $_{2}$ O $_{3}$ / $I^^{2}$ -Ga $_{2}$ O $_{3}$ and Al $_{2}$ O $_{3}$ / $I^^{2}$ -(Al $_{x}$ Ga $_{1 - x}$ ) $_{2}$ O $_{3}$ MOSCAPs

A F M Anhar Uddin Bhuiyan, Lingyu Meng, Dong Su Yu +6

This study investigates the electrical and structural properties of MOSCAPs with in-situ MOCVD-grown Al $_{2}$ O $_{3}$ dielectrics on (010) $I^^{2}$ -Ga $_{2}$ O $_{3}$ and $I^^{2}$ -(Al $_{x}$ Ga $_{1 - x}$ )$_…

physics.app-ph2024

Active Interface Characteristics of Heterogeneously Integrated GaAsSb/Si Photodiodes

Manisha Muduli, Yongkang Xia, Seunghyun Lee +6

There is increased interest in the heterogeneous integration of various compound semiconductors with Si for a variety of electronic and photonic applications. This paper focuses on…

Electrical and Structural Properties of In-Situ MOCVD Grown Al2​O3​/I^2-Ga2​O3​ and Al2​O3​/I^2-(Alx​Ga1−x​)2​O3​ MOSCAPs

Active Interface Characteristics of Heterogeneously Integrated GaAsSb/Si Photodiodes

Electrical and Structural Properties of In-Situ MOCVD Grown Al $_{2}$ O $_{3}$ / $I^^{2}$ -Ga $_{2}$ O $_{3}$ and Al $_{2}$ O $_{3}$ / $I^^{2}$ -(Al $_{x}$ Ga $_{1 - x}$ ) $_{2}$ O $_{3}$ MOSCAPs