activity
20192026
most citedEffects of Hexagonal Boron Nitride Encapsulation on the Electronic Structure of Few-layer MoS

60 citations · 112 across the 5 of their papers we have counts for

collaborators

5 papers

cond-mat.mes-hall2026

Observation of a Mott quantum spin Hall insulator in twisted WSe2

Yifei Jin, Yaqi Ma, Aoqian Zhang +9

Quantum spin Hall (QSH) insulators and Mott insulators are conventionally regarded as distinct insulating phases, arising from band topology and strong Coulomb interactions, respec…

cond-mat.mtrl-sci2024

Light-induced percolative topological phase transition in type-II Weyl semimetal WTe2

Xiaoyue Zhou, Fu Deng, Yifan Gao +5

We report on an ultrafast terahertz free-carrier dynamic study of a photo-excited WTe2 thin film. In the photo-excited state, we observe a metastable electronic state featuring neg…

cond-mat.mes-hall2023★ 1 cited

Unconventional ferroelectricity in half-filling states of antiparallel stacking of twisted WSe2

Liheng An, Zishu Zhou, Xuemeng Feng +9

Abstract: We report on emergence of an abnormal electronic polarization in twisted double bilayer WSe2 in antiparallel interface stacking geometry, where local centrosymmetry of at…

cond-mat.mtrl-sci2021★ 51 cited

Bridging the gap between atomically thin semiconductors and metal leads

Xiangbin Cai, Zefei Wu, Xu Han +15

Electrically interfacing atomically thin transition metal dichalcogenide semiconductors (TMDSCs) with metal leads is challenging because of undesired interface barriers, which have…

cond-mat.mtrl-sci2019★ 60 cited

Effects of Hexagonal Boron Nitride Encapsulation on the Electronic Structure of Few-layer MoS

Xu Han, Jiangxiazi Lin, Junwei Liu +2

The hexagonal boron nitride (hBN) encapsulation has been widely used in the electronics applications of 2D materials to improve device performance by protecting 2D materials agains…