341 citations · 936 across the 12 of their papers we have counts for
12 papers
Millimeter-scale exfoliation of hBN with tunable flake thickness
Amy S. McKeown-Green, Helen J. Zeng, Ashley P. Saunders +10
As a two-dimensional (2D) dielectric material, hexagonal boron nitride (hBN) is in high demand for applications in photonics, nonlinear optics, and nanoelectronics. Unfortunately,…
Strain Engineering for High-Performance Phase Change Memristors
Wenhui Hou, Ahmad Azizimanesh, Aditya Dey +7
A new mechanism for memristive switching in 2D materials is through electric-field controllable electronic/structural phase transitions, but these devices have not outperformed sta…
An atomistic insight into moiré reconstruction in Twisted Bilayer Graphene beyond the magic angle
Aditya Dey, Shoieb Ahmed Chowdhury, Tara Peña +3
Twisted bilayer graphene exhibits electronic properties that are highly correlated with the size and arrangement of moiré patterns. While rigid rotation of two layers creates the t…
Ultrasonic Delamination Based Adhesion Testing for High-Throughput Assembly of van der Waals Heterostructures
Tara Peña, Jewel Holt, Arfan Sewaket +1
Two-dimensional (2D) materials assembled into van der Waals (vdW) heterostructures contain unlimited combinations of mechanical, optical, and electrical properties that can be harn…
Moiré Engineering in 2D Heterostructures with Process-Induced Strain
Tara Peña, Aditya Dey, Shoieb A. Chowdhury +6
We report deterministic control over moiré superlattice interference pattern in twisted bilayer graphene by implementing designable device-level heterostrain with process-induced s…
Strain Engineering 2D MoS with Thin Film Stress Capping Layers
Tara Peña, Shoieb A. Chowdhury, Ahmad Azizimanesh +3
We demonstrate a method to induce tensile and compressive strain into two-dimensional transition metal dichalcogenide (TMDC) MoS via the deposition of stressed thin films to…
Strain-Based Room-Temperature Non-Volatile MoTe Ferroelectric Phase Change Transistor
Wenhui Hou, Ahmad Azizimanesh, Arfan Sewaket +5
The primary mechanism of operation of almost all transistors today relies on electric-field effect in a semiconducting channel to tune its conductivity from the conducting 'on'-sta…
Probing short-range magnetic order in a geometrically frustrated magnet by spin Seebeck effect
Changjiang Liu, Stephen M. Wu, John E. Pearson +3
Competing magnetic interactions in geometrically frustrated magnets give rise to new forms of correlated matter, such as spin liquids and spin ices. Characterizing the magnetic str…
Antiferromagnetic spin Seebeck Effect
Stephen M. Wu, Wei Zhang, Amit KC +6
We report on the observation of the spin Seebeck effect in antiferromagnetic MnF. A device scale on-chip heater is deposited on a bilayer of Pt (4 nm)/MnF (110) (30 nm) gro…
Spin Seebeck devices using local on-chip heating
Stephen M. Wu, Frank Y. Fradin, Jason Hoffman +2
A micro-patterned spin Seebeck device is fabricated using an on-chip heater. Current is driven through a Au heater layer electrically isolated from a bilayer consisting of FeO$…
Spin waves in micro-structured yttrium iron garnet nanometer-thick films
Matthias B. Jungfleisch, Wei Zhang, Wanjun Jiang +8
We investigated the spin-wave propagation in a micro-structured yttrium iron garnet waveguide of nm thickness. Utilizing spatially-resolved Brillouin light scattering microsco…
Unambiguous separation of the inverse spin Hall and anomalous Nernst Effects within a ferromagnetic metal using the spin Seebeck effect
Stephen M. Wu, Jason Hoffman, John E. Pearson +1
The longitudinal spin Seebeck effect is measured on the ferromagnetic insulator FeO with the ferromagnetic metal CoFeB (CoFeB) as the spin detector.…