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W. Hou

3 papers hereh-index 10531 citations15 works total

Matching runs newest-first, so older work may not be attached to this profile yet.

author position
  • first author2
  • middle author1

Across the 3 of 3 papers where every author was matched, so the position is known.

fields
  • physics.app-ph2
  • cond-mat.mes-hall1
same name
  • W. Hou — 458 papers, h 0
  • W. Hou — 80 papers, h 21
  • W. Hou — 66 papers, h 77
  • W. Hou — 56 papers, h 105
  • W. Hou — 33 papers, h 19
  • W. Hou — 32 papers, h 6

Either other researchers who publish under this name, or the same person where the external sources have not merged their records.

identity via Semantic Scholar / OpenAlex

activity
20192023
most citedStrain-Based Room-Temperature Non-Volatile MoTe2​ Ferroelectric Phase Change Transistor

191 citations · 312 across the 3 of their papers we have counts for

collaborators
Showing 2019Show all

1 paper · 1 filter

physics.app-ph2019★ 191 cited

Strain-Based Room-Temperature Non-Volatile MoTe2​ Ferroelectric Phase Change Transistor

Wenhui Hou, Ahmad Azizimanesh, Arfan Sewaket +5

The primary mechanism of operation of almost all transistors today relies on electric-field effect in a semiconducting channel to tune its conductivity from the conducting 'on'-sta…

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Not affiliated with arXiv. Researcher data from Semantic Scholar (ODC-BY) and OpenAlex.