51 citations · 84 across the 6 of their papers we have counts for
6 papers
Spin-dependent recombination in GaAsN alloys
V. K. Kalevich, E. L. Ivchenko, M. M. Afanasiev +5
The spin-dependent recombination (SDR) has been observed in GaAs_{1-x}N_{x} (x = 2.1, 2.7, 3.4%) at room temperature. It reveals itself in a decrease of the edge photoluminescence…
Terahertz superlattice parametric oscillator
K. F. Renk, B. I. Stahl, A. Rogl +5
We report a GaAs/AlAs superlattice parametric oscillator. It was pumped by a microwave field (power few mW) and produced 3rd harmonic radiation (frequency near 300 GHz). The nonlin…
Nitrogen local electronic structure in Ga(In)AsN alloys by soft-X-ray absorption and emission: Implications for optical properties
V. N. Strocov, P. O. Nilsson, T. Schmitt +7
Soft-X-ray emission and absorption spectroscopies with their elemental specificity are used to determine the local electronic structure of N atoms in Ga(In)AsN diluted semiconducto…
Monopolar Optical Orientation of Electronic Spins in Semiconductors
S. A. Tarasenko, E. L. Ivchenko, V. V. Bel'kov +8
It is shown that absorption of circularly polarized infrared radiation due to intraband (Drude-like) transitions in n-type bulk semiconductors and due to intra-subband or inter-sub…
Optical Spin Orientation under Inter- and Intra-Subband Transitions in QWs
S. A. Tarasenko, E. L. Ivchenko, V. V. Bel'kov +8
It is shown that absorption of circularly polarized infrared radiation achieved by inter-subband and intra-subband (Drude-like) transitions results in a monopolar spin orientation…
Photoluminescence and transport in selectively doped p-GaAs/AlGaAs quantum wells: manifestation of the upper Hubbard band
N. V. Agrinskaya, Yu. L. Ivanov, P. V. Petrov +1
By selective doping (Be) of the well and barrier regions of p-GaAs/AlGaAs structures we have realized the situation where the upper Hubbard band (A+ centers) has been occupied by h…